| MD simulation of a crystal block of 5 million silicon atoms as 11 silicon atoms implanted, each with an energy of 15keV. The simulation exhibits realistic phenomena such as amorphization near the surface and the channeling of some impacting atoms. These snapshots show the atoms displaced from their crystal positions (damaged areas) and the top layer (displayed in gray) at times 92 and 277 femtoseconds (10-15 seconds) after the first impact. |